基质刚性影响声孔效应介导的单细胞基因转染

实验研究了基质刚性对单细胞质粒DNA转染效果的影响。实验采用高声压短脉冲(0.45MPa,10μs)条件的超声对培养在不同硬度凝胶基质(软的凝胶基质：0.2kPa,硬的凝胶基质：40kPa)上的力学敏感细胞NIH 3T3进行质粒DNA转染实验。实验结果表明,培养在硬的凝胶基质上的细胞,质粒DNA转染效率明显高于培养在软的凝胶基质上的细胞。进一步对质粒DNA进行荧光示踪可知培养在不同刚性基质上的细胞导入质粒DNA的方式不同。当细胞被培养在硬的凝胶基质上时,通过声致穿孔产生的小孔进入细胞内的质粒DNA更多,而培养在软的凝胶基质上的细胞,更多的质粒DNA可以通过非声致穿孔作用,例如内吞方式导入细胞。 细胞骨架蛋白分布规律表明,硬的凝胶基质上培养的细胞内有更多的F肌动蛋白微丝,可以更好地支撑起细胞的铺展形态,相对不容易发生内吞作用。而软的凝胶基质上培养的细胞内F肌动蛋白则更多以球形状态存在,细胞形貌骗向圆形,此时更容易发生胞吞作用。     

介质折射率对一维三元光子晶体带隙的影响

利用光学传输矩阵法,数值模拟了一维二元、三元光子晶体的带隙结构,得出:三元光子晶体的主带隙略宽于二元光子晶体的主带隙;三元光子晶体的主带隙主要取决于最高折射率的介质和最低折射率的介质,而与居于两者之间的介质关系不大,并作出了相应的关系曲线。最后推导了三元光子晶体的色散关系。     

二维光子晶体异质结构的带隙分析

提出异质结构的二维光子晶体模型,用时域有限差分法计算其带隙,数值计算结果表明,其带隙宽度变大.     

边界衍射波理论公式的准确性数值分析

利用数值分析的方法分析了由边界波理论公式所得的圆形光阑衍射场的光强分布.通过对边界波理论公式所得的光强分布曲线,对几何照明区与阴影区的光强分布曲线与面衍射积分公式所得的光强分布曲线进行比较,分析了边界波理论公式对衍射场描述的准确性.     

A Novel Analytical Approach for Multi-Layer Diaphragm-Based Optical Microelectromechanical-System Pressure Sensors

An optical microelectromechanical-system （MEMS） pressure sensor based on multi-layer circular diaphragm is described and analysed by using the proposed novel analytical approach and the traditional transfer matrix method. The analytical expressions of the deflection of multi-layer diaphragm and absolute optical reflectance are derived respectively. The influence of residual stress on the deflection of diaphragm is also analysed. Simulation results given by the finite element method are consistent with the ones which are analysed by using the analytical approach. The analytical approach will be helpful to design and fabricate the optical MEMS pressure sensors with multi-layer diaphragm based on Fabry-Perot interferometry.     

The Fundamental Experiments of Red Tide Chemical Forecast

Many food algae and red tide algae were cultivated in the f/2 medium, and the nitric oxide (NO) concentration of the medium and the cell density were determined. The experiments on algae were conducted when different concentrations of NO were added into the medium using two methods. The results show that low concentrations of NO were self-produced by marine algae during the exponential growth period and were about nmol/L level. But at the end of the period, i.e., 2 or 3 days before the cell density reaches the maximum, an NO peak appeared, with the NO concentration reaching 10 nmol/L. The NO threshold concentration exists according to the influence of exogenous NO on the marine phytoplankton growth. One type is the threshold concentration that can promote algae growth, and its value is between 10 and 1 nmol level, or even lower. The other type can inhibit the phytoplankton growth, which is about μmol level or higher. The results indicate that red tide algae are far more sensitive to NO than are food algae. The fundamental experimental outcome above may provide a new clue for red tide chemical forecast by inspecting the NO change.     

Ar—Kr溶液扩散系数的分子动力学模拟及其与温度的关系

用分子动力学模拟方法研究确定Ａｒ－Ｋｒ溶液的自扩散系数Ｄ１、Ｄ２和互扩散系数Ｄ１２以及它们随温度变化的规律。结果表明，分别用Ｇｒｅｅｎ－Ｋｕｂｏ法和Ｅｉｎｓｔｅｉｎ法得到的扩散系数在数值上一致；该溶液的３种扩散系数均满足Ｄ＝Ｄ０ｅ＾Ｅ／ＲＴ关系。     

掺杂SrTiO3体系上甲烷氧化偶联反应的研究—活性氧物种的作用

本文采用循环氧化还原法,脉冲反应及TPD等实验手段对钙钛矿型氧化物掺杂SrTiO_3体系上甲烷氧化偶联反应中的活性氧物种的作用进行了研究.结果表明,催化剂由于掺杂产生的未被充分还原的氧物种(O~(α-)(0<α<2)是活化甲烷并促使其发生偶联反应的主要的活性中心,而表面晶格氧(O_L~(2-))则主要使甲烷深度氧化;消耗掉的未被充分还原的氧或晶格氧可以在高温下氧气氛中氧化复原.对于掺杂的SrTiO_3样品,体相中的氧在惰性气氛或还原气氛中可以向表面扩散.吸附氧可能不直接与甲烷作用而主要通过催化剂表面活性氧物种(O~(α-)或O_L~(2-))而起作用.     

Pt对Mo基催化剂还原-硫化过程的影响

采用脉冲硫化、连续硫化、程序升温还原、程序升温及程序降温电导及X射线衍射等方法研究了贵金属Pt对MoO3催化剂还原-流化过程的影响及Pt对MOS2配位不饱和活性中心形成的影响．结果表明，Pt担载或在MoO3上可以促进MoO3的还原-硫化，使MoO3的还原-硫化温度大大降低Pt担载在MoSw上可促进MoS2的部分还原形成配位不饱和的钼中心     

STUDIES ON ION IMPLANTATION AND ELECTRICAL PROPERTIES OF POLYACETYLENE FILMS

The effects of ion implantation on ployacetylene films PA have been studied with Ar~+, Fe~+, C1~+, I~+, Na~+ and K~+ ions in the energy range of 15—30 keV. The changes of PA films in the electrical conductivity, due to chemical doping and ion implantation in relation to their structure and depth profiles of impurities, were measured through infrared (ATR/FTIK), Rutherford backscattering spectrometry (RBS) and the four probe technique. In all cases, ion implantation of active ions exhibits the same effects as chemical doping. The formation of p-n junction is observed at the interface of implanted region and chemical doped PA substrate. The mechanism of interaction process between ion beam and polymer is also discussed.